Invention Grant
US08154829B2 Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer
有权
隧道磁阻（TMR）器件具有用于MgO隧道势垒层的改进的铁磁底层
- Patent Title: Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer
- Patent Title (中): 隧道磁阻（TMR）器件具有用于MgO隧道势垒层的改进的铁磁底层
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Application No.: US12553864Application Date: 2009-09-03
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Publication No.: US08154829B2Publication Date: 2012-04-10
- Inventor: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- Applicant: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agent Thomas R. Berthold
- Main IPC: G11B5/127
- IPC: G11B5/127
Abstract:
A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (CoxFe(100-x))(100-y)Gey, where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 26 and 37. The ferromagnetic underlayer may be the CoxFe(100-x))(100-y)Gey portion of a bilayer of two ferromagnetic layers, for example a CoFe/(CoxFe(100-x))(100-y)Gey bilayer. The specific composition of the ferromagnetic underlayer improves the crystallinity of the MgO tunneling barrier after annealing and improves the tunneling magnetoresistance of the TMR device.
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