Invention Grant
US08154847B2 Capacitor structure 有权
电容结构

  • Patent Title: Capacitor structure
  • Patent Title (中): 电容结构
  • Application No.: US12209210
    Application Date: 2008-09-12
  • Publication No.: US08154847B2
    Publication Date: 2012-04-10
  • Inventor: Yu-Jen Wang
  • Applicant: Yu-Jen Wang
  • Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
  • Assignee: Mediatek Inc.
  • Current Assignee: Mediatek Inc.
  • Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
  • Agent Winston Hsu; Scott Margo
  • Main IPC: H01G4/005
  • IPC: H01G4/005 H01G4/06
Capacitor structure
Abstract:
A capacitor structure is disclosed. The capacitor structure includes at least a D1+ first-level array. The D1+ first-level array comprises three first D1+ conductive pieces and a second D1+ conductive piece. Two of the first D1+ conductive pieces are disposed in a first row of the D1+ first-level array, and the remaining first D1+ conductive piece and the second D1+ conductive piece are disposed in a second row of the D1+ first-level array from left to right. The adjacent first D1+ conductive pieces are connected to each other, and the first D1+ conductive pieces are not connected to the second D1+ conductive piece.
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