Invention Grant
- Patent Title: Capacitor structure
- Patent Title (中): 电容结构
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Application No.: US12209210Application Date: 2008-09-12
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Publication No.: US08154847B2Publication Date: 2012-04-10
- Inventor: Yu-Jen Wang
- Applicant: Yu-Jen Wang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: Mediatek Inc.
- Current Assignee: Mediatek Inc.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G4/06

Abstract:
A capacitor structure is disclosed. The capacitor structure includes at least a D1+ first-level array. The D1+ first-level array comprises three first D1+ conductive pieces and a second D1+ conductive piece. Two of the first D1+ conductive pieces are disposed in a first row of the D1+ first-level array, and the remaining first D1+ conductive piece and the second D1+ conductive piece are disposed in a second row of the D1+ first-level array from left to right. The adjacent first D1+ conductive pieces are connected to each other, and the first D1+ conductive pieces are not connected to the second D1+ conductive piece.
Public/Granted literature
- US20100067169A1 CAPACITOR STRUCTURE Public/Granted day:2010-03-18
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