Invention Grant
US08154850B2 Systems and methods for a thin film capacitor having a composite high-k thin film stack
有权
具有复合高k薄膜叠层的薄膜电容器的系统和方法
- Patent Title: Systems and methods for a thin film capacitor having a composite high-k thin film stack
- Patent Title (中): 具有复合高k薄膜叠层的薄膜电容器的系统和方法
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Application No.: US12117099Application Date: 2008-05-08
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Publication No.: US08154850B2Publication Date: 2012-04-10
- Inventor: Marina Zelner , Mircea Capanu , Susan C. Nagy
- Applicant: Marina Zelner , Mircea Capanu , Susan C. Nagy
- Applicant Address: US NH Nashua
- Assignee: Paratek Microwave, Inc.
- Current Assignee: Paratek Microwave, Inc.
- Current Assignee Address: US NH Nashua
- Agency: Guntin Meles & Gust, PLC
- Agent Andrew Gust
- Main IPC: H01G4/06
- IPC: H01G4/06
Abstract:
Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.
Public/Granted literature
- US20080278887A1 Systems and Methods for a Thin Film Capacitor Having a Composite High-K Thin Film Stack Public/Granted day:2008-11-13
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