Invention Grant
- Patent Title: Magnetoresistance effect element and magnetic random access memory
- Patent Title (中): 磁阻效应元件和磁性随机存取存储器
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Application No.: US12739855Application Date: 2008-08-21
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Publication No.: US08154913B2Publication Date: 2012-04-10
- Inventor: Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
- Applicant: Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2007-277519 20071025
- International Application: PCT/JP2008/064891 WO 20080821
- International Announcement: WO2009/054180 WO 20090430
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A magnetoresistance effect element comprising: a first magnetization fixed layer whose magnetization direction is fixed; a first magnetization free layer whose magnetization direction is variable; a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer; a second magnetization fixed layer whose magnetization direction is fixed; a second magnetization free layer whose magnetization direction is variable; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, while the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. In a plane parallel to each layer, center of the second magnetization free layer is displaced from center of the first magnetization free layer.
Public/Granted literature
- US20100254183A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGETIC RANDOM ACCESS MEMORY Public/Granted day:2010-10-07
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