Invention Grant
- Patent Title: Magnetoresistive element and magnetoresistive random access memory including the same
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Application No.: US13112260Application Date: 2011-05-20
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Publication No.: US08154915B2Publication Date: 2012-04-10
- Inventor: Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- Applicant: Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-248251 20070925
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L29/82

Abstract:
The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
Public/Granted literature
- US20110222335A1 MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME Public/Granted day:2011-09-15
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