Invention Grant
- Patent Title: Memory array power domain partitioning
- Patent Title (中): 内存阵列电源域分区
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Application No.: US12711115Application Date: 2010-02-23
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Publication No.: US08154938B2Publication Date: 2012-04-10
- Inventor: Sudhir K. Madan , Hugh McAdams
- Applicant: Sudhir K. Madan , Hugh McAdams
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
An integrated circuit containing a nonvolatile memory circuit which contains memory segments and sense amplifier banks individually powered by a power decoder circuit. A method of accessing a portion of a powered-down memory.
Public/Granted literature
- US20100226162A1 Memory Array Power Domain Partitioning Public/Granted day:2010-09-09
Information query
