Invention Grant
US08155163B2 Photonic crystal laser and method of manufacturing photonic crystal laser
失效
光子晶体激光器和光子晶体激光器的制造方法
- Patent Title: Photonic crystal laser and method of manufacturing photonic crystal laser
- Patent Title (中): 光子晶体激光器和光子晶体激光器的制造方法
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Application No.: US12531855Application Date: 2008-01-29
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Publication No.: US08155163B2Publication Date: 2012-04-10
- Inventor: Hirohisa Saito , Hideki Matsubara
- Applicant: Hirohisa Saito , Hideki Matsubara
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Satori; Leigh D. Thelen
- Priority: JP2007-075902 20070323
- International Application: PCT/JP2008/051241 WO 20080129
- International Announcement: WO2008/117562 WO 20081002
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.
Public/Granted literature
- US20100103972A1 PHOTONIC CRYSTAL LASER AND METHOD OF MANUFACTURING PHOTONIC CRYSTAL LASER Public/Granted day:2010-04-29
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