Invention Grant
- Patent Title: Memory cell and page break inspection
- Patent Title (中): 记忆单元和分页检查
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Application No.: US12197690Application Date: 2008-08-25
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Publication No.: US08155428B2Publication Date: 2012-04-10
- Inventor: Jason Z. Lin , Xing Chu
- Applicant: Jason Z. Lin , Xing Chu
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Luedeka Neely Group, P.C.
- Main IPC: G06K9/00
- IPC: G06K9/00

Abstract:
A method of inspecting an array having memory blocks and page breaks. The array is imaged, and the image is divided into sections. Sections that include the memory blocks are selected into a candidate image. Pixels within a boundary horizontal line of pixels are inspected to determine horizontal edges of the memory blocks. Pixels within a boundary vertical line of pixels are inspected to determine vertical edges of the memory blocks. An image of a first memory block is compared to an image of a second memory block to determine differences. The differences are flagged as potential memory block defects. Images of the page breaks are compared to determine differences, and the differences are flagged as potential page break defects.
Public/Granted literature
- US20090067703A1 Memory cell and page break inspection Public/Granted day:2009-03-12
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