Invention Grant
- Patent Title: Photonic crystal and method of fabrication
- Patent Title (中): 光子晶体和制造方法
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Application No.: US12249550Application Date: 2008-10-10
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Publication No.: US08155492B2Publication Date: 2012-04-10
- Inventor: Sanja Hadzialic , Olav Solgaard
- Applicant: Sanja Hadzialic , Olav Solgaard
- Applicant Address: US CA Palo Alto
- Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee Address: US CA Palo Alto
- Agency: DeMont & Breyer, LLC
- Main IPC: G02B6/10
- IPC: G02B6/10

Abstract:
A method is disclosed for forming a photonic crystal in a homogeneous layer of material. The method enables the fabrication of 1D, 2D, or 3D photonic crystals. Photonic crystals in accordance with embodiments of the present invention exhibit low temperature sensitivity and low device curvature. In some embodiments, photonic crystals in accordance with embodiments of the present invention are integrated with mechanical elements, such as micromechanical, nanomechanical, microelectronic, and microfluidics devices and systems.
Public/Granted literature
- US20090097811A1 Photonic Crystal and Method of Fabrication Public/Granted day:2009-04-16
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