Invention Grant
- Patent Title: Semiconductor component and method of determining temperature
- Patent Title (中): 半导体元件及温度测定方法
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Application No.: US12168369Application Date: 2008-07-07
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Publication No.: US08155916B2Publication Date: 2012-04-10
- Inventor: Patrick Baginski , Reinhold Bayerer , Holger Ruething , Daniel Domes
- Applicant: Patrick Baginski , Reinhold Bayerer , Holger Ruething , Daniel Domes
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G01K7/16
- IPC: G01K7/16

Abstract:
One embodiment provides a circuit arrangement integrated in a semiconductor body. At least one power semiconductor component integrated in the semiconductor body and having a control connection and a load connection is provided. A resistance component is thermally coupled to the power semiconductor component and likewise integrated into the semiconductor body and arranged between the control connection and the load connection of the power semiconductor component. The resistance component has a temperature-dependent resistance characteristic curve. A driving and evaluation unit is designed to evaluate the current through the resistance component or the voltage drop across the resistance component and provides a temperature signal dependent thereon.
Public/Granted literature
- US20100001785A1 SEMICONDUCTOR COMPONENT AND METHOD OF DETERMINING TEMPERATURE Public/Granted day:2010-01-07
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