Invention Grant
US08156262B2 Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction
有权
通过在读取或写入事务期间将信号施加到至少一个外部引脚，动态设置双倍数据速率存储器件的突发长度
- Patent Title: Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction
- Patent Title (中): 通过在读取或写入事务期间将信号施加到至少一个外部引脚，动态设置双倍数据速率存储器件的突发长度
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Application No.: US13212731Application Date: 2011-08-18
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Publication No.: US08156262B2Publication Date: 2012-04-10
- Inventor: Christopher S. Johnson
- Applicant: Christopher S. Johnson
- Applicant Address: US NY Mt. Kisco
- Assignee: Round Rock Research, LLC
- Current Assignee: Round Rock Research, LLC
- Current Assignee Address: US NY Mt. Kisco
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: G06F13/26
- IPC: G06F13/26 ; G06F12/06 ; G06F8/00 ; G06F7/00
Abstract:
One or more external control pins and/or addressing pins on a memory device are used to set one or both of a burst length and burst type of the memory device.
Public/Granted literature
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