Invention Grant
- Patent Title: Multilayer interconnection substrate and method of manufacturing the same
- Patent Title (中): 多层互连基板及其制造方法
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Application No.: US11474453Application Date: 2006-06-26
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Publication No.: US08158503B2Publication Date: 2012-04-17
- Inventor: Tomoyuki Abe
- Applicant: Tomoyuki Abe
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2006-087431 20060328
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A multilayer interconnection substrate is disclosed that includes a multilayer interconnection layer having at least a first interconnection layer and a second interconnection layer stacked with an insulating layer provided therebetween, and a connection via configured to electrically connect the first interconnection layer and the second interconnection layer. The connection via includes an internal conductor and a metal film covering the internal conductor. The internal conductor is an aggregate of metal particles.
Public/Granted literature
- US20070232059A1 Multilayer interconnection substrate and method of manufacturing the same Public/Granted day:2007-10-04
Information query
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