Invention Grant
US08160404B2 High speed and low loss GeSi/Si electro-absorption light modulator and method of fabrication using selective growth
有权
高速低损耗GeSi / Si电吸收光调制器和使用选择性增长的制造方法
- Patent Title: High speed and low loss GeSi/Si electro-absorption light modulator and method of fabrication using selective growth
- Patent Title (中): 高速低损耗GeSi / Si电吸收光调制器和使用选择性增长的制造方法
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Application No.: US11561474Application Date: 2006-11-20
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Publication No.: US08160404B2Publication Date: 2012-04-17
- Inventor: Dong Pan , Jifeng Liu , Jurgen Michel , Lionel C. Kimerling
- Applicant: Dong Pan , Jifeng Liu , Jurgen Michel , Lionel C. Kimerling
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Gesmer Updegrove LLP
- Main IPC: G02F1/035
- IPC: G02F1/035 ; G02B6/12 ; G02B6/10
Abstract:
An optoelectronic device includes an input waveguide structure that receives an input optical signal. A GeSi/Si waveguide structure receives from the input waveguide the input optical signal and performs selective optoelectronic operations on the input optical signal. The GeSi/Si waveguide structure outputs an optical or electrical output signal associated with the selective optoelectronic operations performed on the input optical signal. An output waveguide structure receives the output optical signal from the GeSi/Si waveguide structure and provides the optical output signal for further processing.
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