Invention Grant
US08161635B1 Methods for forming a single cap via in pad of substrate 有权
在衬底焊盘中形成单盖通孔的方法

Methods for forming a single cap via in pad of substrate
Abstract:
Novel methods are provided that results in the formation of single-cap VIPs in a substrate are described herein. As a result, fine pitch trace patterns may be formed on the substrate. The methods may include initially providing a substrate having a first and a second side, the first side being opposite of the second side. A via may then be constructed in the substrate, the via being formed within a via hole that extends from the first side to the second side of the substrate, the formed via having a first end located at the first side of the substrate, and a second end opposite the first end located at the second side of the substrate. A selective deposition may be performed of a conductive material on the second end of the via to form a conductive pad directly on the via on the second side of the substrate without depositing the conductive material onto the first side of the substrate.
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