Invention Grant
- Patent Title: Methods for forming a single cap via in pad of substrate
- Patent Title (中): 在衬底焊盘中形成单盖通孔的方法
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Application No.: US12026429Application Date: 2008-02-05
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Publication No.: US08161635B1Publication Date: 2012-04-24
- Inventor: Chien Te Chen
- Applicant: Chien Te Chen
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: H01K3/10
- IPC: H01K3/10

Abstract:
Novel methods are provided that results in the formation of single-cap VIPs in a substrate are described herein. As a result, fine pitch trace patterns may be formed on the substrate. The methods may include initially providing a substrate having a first and a second side, the first side being opposite of the second side. A via may then be constructed in the substrate, the via being formed within a via hole that extends from the first side to the second side of the substrate, the formed via having a first end located at the first side of the substrate, and a second end opposite the first end located at the second side of the substrate. A selective deposition may be performed of a conductive material on the second end of the via to form a conductive pad directly on the via on the second side of the substrate without depositing the conductive material onto the first side of the substrate.
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