Invention Grant
- Patent Title: Method of forming an aluminum oxide layer
- Patent Title (中): 形成氧化铝层的方法
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Application No.: US12203647Application Date: 2008-09-03
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Publication No.: US08163343B2Publication Date: 2012-04-24
- Inventor: Shreyas S. Kher , Christopher S. Olsen , Lucien Date
- Applicant: Shreyas S. Kher , Christopher S. Olsen , Lucien Date
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: C23C16/40
- IPC: C23C16/40
Abstract:
Methods of forming aluminum oxide layers on substrates are disclosed. In some embodiments, the method includes depositing an aluminum oxide seed layer on the substrate using a first process having a first deposition rate. The method further includes depositing a bulk aluminum oxide layer atop the seed layer using a metalorganic chemical vapor deposition (MOCVD) process having a second deposition rate greater than the first deposition rate.
Public/Granted literature
- US20100055905A1 METHOD OF FORMING AN ALUMINUM OXIDE LAYER Public/Granted day:2010-03-04
Information query
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