中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US08163444B2 Mask for crystallizing a semiconductor layer and method of crystallizing a semiconductor layer using the same 有权
用于使半导体层结晶的掩模和使用其使半导体层结晶的方法

Mask for crystallizing a semiconductor layer and method of crystallizing a semiconductor layer using the same
Abstract:
A mask for crystallizing a semiconductor layer includes a plurality of first main-slit portions, a plurality of second main-slit portions, upper slit portion and lower slit portion. The first main-slit portions extend along an inclined direction with respect to a first direction. The second main-slit portions are spaced apart from the first main-slit portions. The upper slit portion is disposed on the first main-slit portions along a second direction to be parallel to the first main-slit portions, and extends partway over the second main-slit portions to be longer than the first main-slit portions. The lower slit portion is disposed under the second main-slit portions along the second direction to be parallel to the second main-slit portions, and extends partway under the first main-slit portions to be longer than the second main-slit portions.
Abstract(Chinese):

用于使半导体层结晶的掩模包括多个第一主狭缝部分，多个第二主狭缝部分，上部狭缝部分和下部狭缝部分。 第一主狭缝部分沿着相对于第一方向的倾斜方向延伸。 第二主狭缝部分与第一主狭缝部分间隔开。 上缝隙部分沿着与第一主狭缝部分平行的第二方向设置在第一主狭缝部分上，并且在第二主狭缝部分上方延伸成比第一主狭缝部分长。 下狭缝部分沿着第二方向设置在第二主狭缝部分的下方以与第二主狭缝部分平行，并且在第一主狭缝部分的下方延伸以比第二主狭缝部分长。

Public/Granted literature
Information query
Espacenet
Patent Agency Ranking
0/0