A method of double patterning a semiconductor structure with a single material which after patterning becomes a permanent part of the semiconductor structure. More specifically, a method to form a patterned semiconductor structure with small features is provided which are difficult to obtain using conventional exposure lithographic processes. The method of the present invention includes the use of patternable low-k materials which after patterning remain as a low-k dielectric material within the semiconductor structure. The method is useful in forming semiconductor interconnect structures in which the patternable low-k materials after patterning and curing become a permanent element, e.g., a patterned interlayer low-k material, of the interconnect structure.