Invention Grant
US08163660B2 SONOS type stacks for nonvolatile change trap memory devices and methods to form the same
有权
用于非易失性变换陷阱存储器件的SONOS型堆栈及其形成方法
- Patent Title: SONOS type stacks for nonvolatile change trap memory devices and methods to form the same
- Patent Title (中): 用于非易失性变换陷阱存储器件的SONOS型堆栈及其形成方法
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Application No.: US12413389Application Date: 2009-03-27
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Publication No.: US08163660B2Publication Date: 2012-04-24
- Inventor: Helmut Puchner , Igor Polishchuk , Sagy Levy
- Applicant: Helmut Puchner , Igor Polishchuk , Sagy Levy
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method for fabricating a nonvolatile charge trap memory device is described. The method includes forming a first oxide layer on a surface of a substrate. The first oxide layer is exposed to a first decoupled plasma nitridation process having a first bias. Subsequently, a charge-trapping layer is formed on the first oxide layer. The charge-trapping layer is exposed to an oxidation process and then to a second decoupled plasma nitridation process having a second, different, bias.
Public/Granted literature
- US20100041222A1 SONOS Type Stacks for Nonvolatile ChangeTrap Memory Devices and Methods to Form the Same Public/Granted day:2010-02-18
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