Invention Grant
- Patent Title: Embedded circuit structure and fabricating process of the same
- Patent Title (中): 嵌入式电路结构及其制作工艺相同
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Application No.: US11958920Application Date: 2007-12-18
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Publication No.: US08164004B2Publication Date: 2012-04-24
- Inventor: Tsung-Yuan Chen , Shu-Sheng Chiang
- Applicant: Tsung-Yuan Chen , Shu-Sheng Chiang
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: J.C. Patents
- Priority: TW96124679A 20070706
- Main IPC: H05K1/11
- IPC: H05K1/11

Abstract:
A fabricating process for an embedded circuit structure is provided. A through hole is formed in a core panel and penetrates the core panel. Two indent patterns are respectively formed on two opposite surfaces of the core panel. A conductive material is electroplated into the through hole and the indent patterns, so as to form a conductive channel in the through hole and two circuit patterns in the indent patterns respectively. Portions of the circuit patterns, which exceed the indent patterns respectively, are removed for planarizing the circuit patterns to be level with the two surfaces of the core panel respectively.
Public/Granted literature
- US20090008145A1 EMBEDDED CIRCUIT STRUCTURE AND FABRICATING PROCESS OF THE SAME Public/Granted day:2009-01-08
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