Invention Grant
US08164080B2 Diode structures and resistive random access memory devices having the same
有权
具有相同的二极管结构和电阻随机存取存储器件
- Patent Title: Diode structures and resistive random access memory devices having the same
- Patent Title (中): 具有相同的二极管结构和电阻随机存取存储器件
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Application No.: US12659166Application Date: 2010-02-26
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Publication No.: US08164080B2Publication Date: 2012-04-24
- Inventor: Young-bae Kim
- Applicant: Young-bae Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0024576 20090323
- Main IPC: H01L29/88
- IPC: H01L29/88
Abstract:
A diode structure includes: a lower electrode and an insulating layer disposed on the lower electrode. The insulating layer includes aperture exposing a portion of the lower electrode. The diode structure further includes: a first layer and a second layer. The first layer is disposed in the aperture and having a depressed portion. The second layer is disposed in the depressed portion of the first layer. A resistive random access memory (RRAM) device includes the above-described diode structure.
Public/Granted literature
- US20100237315A1 Diode structures and resistive random access memory devices having the same Public/Granted day:2010-09-23
Information query
IPC分类:
