An optoelectronic device is disclosed which includes a quantum dot layer including plurality of quantum dots which do not have capping layers. This optoelectronic device may be a quantum dot light-emitting device, which includes (1) a substrate which is transparent or translucent, (2) an anode electrical conducting layer which is transparent or translucent, and is located adjacent to the substrate, (3) a planarizing/hole injection layer which is located adjacent to the anode electrical conducting layer, (4) a quantum dot layer including the plurality of quantum dots which do not have capping layers, and (5) a cathode electrical conducting layer which is located adjacent to the quantum dot layer.