Invention Grant
- Patent Title: Phase-controlled field effect transistor device and method for manufacturing thereof
- Patent Title (中): 相控场效应晶体管器件及其制造方法
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Application No.: US12586282Application Date: 2009-09-17
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Publication No.: US08164086B2Publication Date: 2012-04-24
- Inventor: John Boland , Stefano Sanvito , Borislav Naydenov
- Applicant: John Boland , Stefano Sanvito , Borislav Naydenov
- Applicant Address: IE Dublin
- Assignee: The Provost, Fellows and Scholars of the Colege of the Holy and Undivided Trinity of Queen Elizabeth Near Dublin
- Current Assignee: The Provost, Fellows and Scholars of the Colege of the Holy and Undivided Trinity of Queen Elizabeth Near Dublin
- Current Assignee Address: IE Dublin
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/768 ; H01L29/76 ; H01L29/94 ; H01L31/062
Abstract:
A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region being gated such that on application of an appropriate signal to the gate, energies of the electrons in the channel region defined between the scattering centers may be modulated.
Public/Granted literature
- US20100084631A1 Phase-controlled field effect transistor device and method for manufacturing thereof Public/Granted day:2010-04-08
Information query
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