Invention Grant
- Patent Title: Multi-purpose poly edge test structure
- Patent Title (中): 多功能多边测试结构
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Application No.: US12211615Application Date: 2008-09-16
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Publication No.: US08164091B2Publication Date: 2012-04-24
- Inventor: Wen Shi , Wei Wei Ruan
- Applicant: Wen Shi , Wei Wei Ruan
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend and Stockton LLP
- Priority: CN200610119377 20061205
- Main IPC: H01L23/58
- IPC: H01L23/58

Abstract:
Multi-purpose poly edge test structure. According to an embodiment, the present invention provides a test structure. The test structure includes a doped silicon substrate, the doped silicon substrate being grounded, the doped silicon substrate including a first gate structure and a second gate structure, the first and second gate structures overlaying the doped silicon substrate. The test structure also includes a first conducting pad being electrically coupled to the first gate structure. The test structure also includes a second conducting pad being electrically coupled to the second gate structure.
Public/Granted literature
- US20090033354A1 Multi-purpose poly edge test structure Public/Granted day:2009-02-05
Information query
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