Invention Grant
- Patent Title: Thin film transistor array panel and manufacturing method thereof
- Patent Title (中): 薄膜晶体管阵列面板及其制造方法
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Application No.: US12326841Application Date: 2008-12-02
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Publication No.: US08164097B2Publication Date: 2012-04-24
- Inventor: Kyung-Min Park , Jin-Goo Jung , Chun-Gi You
- Applicant: Kyung-Min Park , Jin-Goo Jung , Chun-Gi You
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2005-0004670 20050118
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a thin film transistor including a gate electrode, a drain electrode, a source electrode and a semiconductor on a substrate; forming a first passivation layer on the drain and the source electrodes; forming a transparent conductive layer on the first passivation layer; etching the transparent conductive layer using a photoresist as an etch mask to expose the portion of the first passivation layer and to form a pixel electrode connected the drain electrode; ashing the first passivation layer and the photoresist; and removing the photoresist.
Public/Granted literature
- US20090085041A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-04-02
Information query
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