Invention Grant
- Patent Title: Light emitting diode chip and manufacturing method thereof
- Patent Title (中): 发光二极管芯片及其制造方法
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Application No.: US12764109Application Date: 2010-04-21
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Publication No.: US08164108B2Publication Date: 2012-04-24
- Inventor: Chih-Chen Lai
- Applicant: Chih-Chen Lai
- Applicant Address: TW Tu-Cheng, New Taipei
- Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: TW Tu-Cheng, New Taipei
- Agency: Altis Law Group, Inc.
- Priority: TW99108716A 20100324
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00

Abstract:
A light emitting diode chip includes a thermal conductive substrate, an epi-layer, a thin-type ohmic contacting film, a transparent conducting layer, and an electrode pad. The epi-layer includes a p-type semiconductor layer, an n-type semiconductor layer, and an active layer. The n-type semiconductor layer includes a stepped surface at a side thereof facing away from the substrate, and the stepped surface includes a central portion and a peripheral portion surrounding the central portion. The n-type semiconductor layer has a thickness decreasing along directions from a center thereof to opposite lateral peripheries thereof. The ohmic contacting film is arranged on the stepped surface. The conducting layer is arranged on the ohmic contacting film. The electrode pad is arranged on the conducting layer and located corresponding to the central portion of the stepped surface.
Public/Granted literature
- US20110233584A1 LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-09-29
Information query
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