Invention Grant
- Patent Title: Electostatic discharge protection circuit coupled on I/O pad
- Patent Title (中): 静电放电保护电路耦合在I / O焊盘上
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Application No.: US09801350Application Date: 2001-03-07
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Publication No.: US08164112B2Publication Date: 2012-04-24
- Inventor: Chun-Hsiang Lai , Meng Huang Liu , Tao Cheng Lu
- Applicant: Chun-Hsiang Lai , Meng Huang Liu , Tao Cheng Lu
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: TW90100247A 20010105
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L23/62 ; H02H9/00

Abstract:
An I/O pad ESD protection circuit is composed of a SCR circuit, a first diode, a second diode, and an anti-latch-up circuit. The SCR circuit has a first connection terminal and a second connection terminal, respectively coupled to the I/O pad and the ground voltage, so as to discharge the electrostatic charges. The anti-latch-up circuit has two terminals, which are respectively coupled to the voltage source and the ground voltage, and another connection terminal, used to send an anti-latch-up signal to the SCR for changing the activating rate. The latch-up phenomenon is avoided.
Public/Granted literature
- US20020089017A1 Electostatic discharge protection circuit coupled on I/O pad Public/Granted day:2002-07-11
Information query
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