Invention Grant
- Patent Title: Semiconductor device including conductive lines with fine line width and method of fabricating the same
- Patent Title (中): 包括具有细线宽度的导线的半导体器件及其制造方法
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Application No.: US13014952Application Date: 2011-01-27
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Publication No.: US08164119B2Publication Date: 2012-04-24
- Inventor: Hyeoung-Won Seo , Byung-Hyug Roh , Seong-Goo Kim , Sang-Min Jeon
- Applicant: Hyeoung-Won Seo , Byung-Hyug Roh , Seong-Goo Kim , Sang-Min Jeon
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0097266 20061002
- Main IPC: H01L27/10
- IPC: H01L27/10

Abstract:
A semiconductor device comprises a semiconductor substrate including a first core region and a second core region between which a cell array region is interposed, a first conductive line and a second conductive line extending to the first core region across the cell array region, and a third conductive line and a fourth conductive line extending to the second core region across the cell array region, wherein a line width of the first through fourth conductive lines is smaller than a resolution limit in a lithography process.
Public/Granted literature
- US20110147800A1 SEMICONDUCTOR DEVICE INCLUDING CONDUCTIVE LINES WITH FINE LINE WIDTH AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-06-23
Information query
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