Invention Grant
US08164121B2 Charge coupled device with potential gradient region between two control gate regions
有权
电荷耦合器件具有两个控制栅极区域之间的电位梯度区域
- Patent Title: Charge coupled device with potential gradient region between two control gate regions
- Patent Title (中): 电荷耦合器件具有两个控制栅极区域之间的电位梯度区域
-
Application No.: US12780708Application Date: 2010-05-14
-
Publication No.: US08164121B2Publication Date: 2012-04-24
- Inventor: Mark Wadsworth
- Applicant: Mark Wadsworth
- Applicant Address: US CA Irvine
- Assignee: Imagerlabs
- Current Assignee: Imagerlabs
- Current Assignee Address: US CA Irvine
- Agency: Haynes and Boone LLP
- Main IPC: H01L27/148
- IPC: H01L27/148

Abstract:
A six-phase charge coupled device (CCD) pixel includes a pixel pair, with each pixel having two adjacent control gates overlying corresponding variable potential wells, where voltages applied to the control gates enable charge to be accumulated into and transferred out of the wells. A clear window region overlies a fixed potential gradient region, decreasing in potential away from the control gates. This region enables a wide band of photons to be sensed by the photosensitive silicon of the CCD. The decreasing potential levels facilitate high charge transfer efficiency (i.e., high CTE) from pixel to pixel via the control or transfer gates. By applying particular voltages to the control gates, charge can be quickly and efficiently transferred between pixels. In addition, the window provides a self aligned mask for the implantation steps and thus prevents the formation of pockets (or wells) due to misalignments that decrease the charge transfer efficiency and causes non-uniformity problems as associated with prior art. Furthermore the window provides a flat region that can be covered with an anti-reflective (AR) coating layer, thus further increasing the quantum efficiency.
Public/Granted literature
- US20100258847A1 Charge Coupled Device With High Quantum Efficiency Public/Granted day:2010-10-14
Information query
IPC分类: