Invention Grant
- Patent Title: CMOS image sensors including backside illumination structure
- Patent Title (中): CMOS图像传感器包括背面照明结构
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Application No.: US12037691Application Date: 2008-02-26
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Publication No.: US08164126B2Publication Date: 2012-04-24
- Inventor: Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
- Applicant: Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2007-0019134 20070226
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.
Public/Granted literature
- US20080203452A1 CMOS IMAGE SENSORS INCLUDING BACKSIDE ILLUMINATION STRUCTURE AND METHOD OF MANUFACTURING IMAGE SENSOR Public/Granted day:2008-08-28
Information query
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