Invention Grant
- Patent Title: Semiconductor device enabling further microfabrication
- Patent Title (中): 半导体器件能够进一步微细加工
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Application No.: US12458143Application Date: 2009-07-01
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Publication No.: US08164129B2Publication Date: 2012-04-24
- Inventor: Hiroyuki Uchiyama
- Applicant: Hiroyuki Uchiyama
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2008-174605 20080703
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A semiconductor device includes a plurality of MOS transistors and wiring connected to a source electrode or a drain electrode of the plurality of MOS transistors and, the wiring being provided in the same layer as the source electrode and the drain electrode in a substrate, or in a position deeper than a surface of the substrate.
Public/Granted literature
- US20100001249A1 Semiconductor device enabling further microfabrication Public/Granted day:2010-01-07
Information query
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