Semiconductor device

Invention Grant

US08164134B2 Semiconductor device 有权

Title translation: 半导体器件

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Patent Title: Semiconductor device
Patent Title (中): 半导体器件
Application No.: US12481403

Application Date: 2009-06-09
Publication No.: US08164134B2

Publication Date: 2012-04-24
Inventor: Ji-Young Kim , Kang L. Wang , Yong-Jik Park , Jeong-Hee Han , Augustin Jinwoo Hong
Applicant: Ji-Young Kim , Kang L. Wang , Yong-Jik Park , Jeong-Hee Han , Augustin Jinwoo Hong
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel Sibley & Sajovec, P.A.
Main IPC: H01L29/792
IPC: H01L29/792 ; H01L27/108

Abstract:

Provided are a semiconductor device and a method of fabricating the same. At least one mold structure defining at least one first opening is formed on a substrate, wherein the mold structure comprises first mold patterns and second mold patterns that are sequentially and alternatingly stacked. Thereafter, side surfaces of the first mold patterns are selectively etched to form undercut regions between the second mold patterns. Then, a semiconductor layer is formed to cover a surface of the mold structure where the undercut regions are formed, and gate patterns are formed, which fill respective undercut regions where the semiconductor layer is formed.

Abstract(Chinese):

提供半导体器件及其制造方法。在衬底上形成限定至少一个第一开口的至少一个模具结构，其中模具结构包括顺序地和交替地堆叠的第一模具图案和第二模具图案。此后，选择性地蚀刻第一模具图案的侧表面以在第二模具图案之间形成底切区域。然后，形成半导体层以覆盖形成底切区域的模具结构的表面，形成栅极图案，填充形成半导体层的各个底切区域。

Public/Granted literature

US20100308391A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-12-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/792	......带有电荷捕获栅绝缘体，例如MNOS存储晶体管