Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12155232Application Date: 2008-05-30
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Publication No.: US08164160B2Publication Date: 2012-04-24
- Inventor: Yuichi Nakao , Takahisa Yamaha
- Applicant: Yuichi Nakao , Takahisa Yamaha
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2007-145809 20070531
- Main IPC: H01L29/92
- IPC: H01L29/92
Abstract:
A semiconductor device according to the present invention has a multilayer wiring structure laminating and disposing a plurality of with sandwiching an insulating film and includes: a copper wire having copper as a main component; an insulating film formed on the copper wire; an aluminum wire having aluminum as a main component and formed on the insulating film to be electrically connected to the copper wire via a via hole formed to penetrate through the insulating film; and a surface protective film formed on the aluminum wire; and the surface protective film formed with a pad opening exposing a portion of the aluminum wire as an electrode pad for electrical connection with an external portion.
Public/Granted literature
- US20080296730A1 Semiconductor device Public/Granted day:2008-12-04
Information query
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