Invention Grant
- Patent Title: Integrated circuit structure and a method of forming the same
- Patent Title (中): 集成电路结构及其形成方法
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Application No.: US12529241Application Date: 2008-02-29
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Publication No.: US08164167B2Publication Date: 2012-04-24
- Inventor: Yue Ping Zhang , Mei Sun
- Applicant: Yue Ping Zhang , Mei Sun
- Applicant Address: SG Singapore
- Assignee: Nanyang Technological University
- Current Assignee: Nanyang Technological University
- Current Assignee Address: SG Singapore
- Agency: Alston & Bird LLP
- International Application: PCT/SG2008/000069 WO 20080229
- International Announcement: WO2008/111914 WO 20080918
- Main IPC: H01L23/552
- IPC: H01L23/552

Abstract:
An integrated circuit structure is disclosed. The integrated circuit structure includes a first package substrate including a radiating element, the radiating element having a radiating element connection extending from the radiating element. The integrated circuit structure further includes a first chip positioned adjacent to the radiating element connection, the first chip having a first chip connection on a surface of the first chip, wherein the first chip connection forms a capacitive coupling with the radiating element connection. A method of forming an integrated circuit structure is also disclosed.
Public/Granted literature
- US20100219513A1 INTEGRATED CIRCUIT STRUCTURE AND A METHOD OF FORMING THE SAME Public/Granted day:2010-09-02
Information query
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