Invention Grant
- Patent Title: High-power white LEDs and manufacturing method thereof
- Patent Title (中): 大功率白光LED及其制造方法
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Application No.: US12987315Application Date: 2011-01-10
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Publication No.: US08164825B2Publication Date: 2012-04-24
- Inventor: Nadarajah Narendran , Yimin Gu
- Applicant: Nadarajah Narendran , Yimin Gu
- Applicant Address: US NY Troy
- Assignee: Rensselaer Polytechnic Institute
- Current Assignee: Rensselaer Polytechnic Institute
- Current Assignee Address: US NY Troy
- Agency: RatnerPrestia
- Main IPC: G02F2/02
- IPC: G02F2/02 ; G02F1/35

Abstract:
A light emitting apparatus has a radiation source for emitting short wavelength radiation. A down conversion material receives and down converts at least some of the short wavelength radiation emitted by the radiation source and back transfers a portion of the received and down converted radiation. An optic device adjacent the down conversion material at least partially surrounds the radiation source. The optic device is configured to extract at least some of the back transferred radiation. A sealant substantially seals a space between the radiation source and the optic device.
Public/Granted literature
- US20110102884A1 HIGH-POWER WHITE LEDS AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-05-05
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