Invention Grant
- Patent Title: Seed layer for TMR or CPP-GMR sensor
- Patent Title (中): 种子层用于TMR或CPP-GMR传感器
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Application No.: US12080277Application Date: 2008-04-02
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Publication No.: US08164862B2Publication Date: 2012-04-24
- Inventor: Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
- Applicant: Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
A composite seed layer that reduces the shield to shield distance in a read head while improving Hex (exchange coupling field) and Hex/Hc (Hc=coercivity) is disclosed and has a SM/A/SM/B configuration in which the SM layers are soft magnetic layers, the A (amorphous) layer is made of at least one of Co, Fe, Ni, and includes one or more amorphous elements, and the B layer is a buffer layer that contacts the AFM (anti-ferromagnetic) layer in the spin valve. The SM/A/SM stack together with the S1 (bottom) shield forms an effective shield such that the buffer layer serves as the effective seed layer while maintaining a blocking temperature of 260° C. in the AFM layer. The lower SM layer may be omitted. Examples of the amorphous layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr while the buffer layer may be Cu, Ru, Cr, Al, or NiFeCr.
Public/Granted literature
- US20090251829A1 Seed layer for TMR or CPP-GMR sensor Public/Granted day:2009-10-08
Information query
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