Invention Grant
- Patent Title: Power source circuit
- Patent Title (中): 电源电路
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Application No.: US12051473Application Date: 2008-03-19
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Publication No.: US08164933B2Publication Date: 2012-04-24
- Inventor: Masashi Fujita , Kiyoshi Kato
- Applicant: Masashi Fujita , Kiyoshi Kato
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2007-097991 20070404
- Main IPC: H02M7/217
- IPC: H02M7/217

Abstract:
A semiconductor device is provided, which comprises a rectifier circuit configured to generate a first voltage from a first signal inputted from an input terminal, a comparing circuit configured to compare a reference voltage and the first voltage inputted from the rectifier circuit and to output a second signal to a switch, and a voltage generation circuit configured to generate a second voltage from the first signal inputted from the input terminal. The rectifier circuit includes a transistor including at least a control terminal, and the voltage generation circuit inputs the second voltage to the control terminal when the switch is turned on in accordance with the second signal.
Public/Granted literature
- US20080247208A1 Semiconductor Device Public/Granted day:2008-10-09
Information query
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