Invention Grant
US08164935B2 Memory modules and methods for modifying memory subsystem performance
有权
用于修改内存子系统性能的内存模块和方法
- Patent Title: Memory modules and methods for modifying memory subsystem performance
- Patent Title (中): 用于修改内存子系统性能的内存模块和方法
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Application No.: US12632176Application Date: 2009-12-07
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Publication No.: US08164935B2Publication Date: 2012-04-24
- Inventor: Franz Michael Schuette , William J. Allen
- Applicant: Franz Michael Schuette , William J. Allen
- Applicant Address: US CA San Jose
- Assignee: OC2 Technology Group, Inc.
- Current Assignee: OC2 Technology Group, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Hartman & Hartman, P.C.
- Agent Gary M. Hartman; Domenica N. S. Hartman
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C17/18

Abstract:
Methods and memory modules adapted for use in computer systems to generate different voltages for core supply (VDD) and input/output supply (VDDQ) inputs to memory components of the computer memory subsystem. The memory module includes a substrate with an edge connector, a memory component, and first and second voltage planes adapted to supply the core supply voltage and the input/output supply voltage to the memory component. The first voltage plane receives a system input voltage from the edge connector, and the second voltage plane is connected to the first voltage plane to receive a second voltage that is either higher or lower than the system input voltage. One of the first and second voltage planes is connected to the memory component to supply the core supply voltage thereto, and the other voltage plane supplies the input/output supply voltage to the memory component.
Public/Granted literature
- US20100142247A1 MEMORY MODULES AND METHODS FOR MODIFYING MEMORY SUBSYSTEM PERFORMANCE Public/Granted day:2010-06-10
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