Invention Grant
- Patent Title: Magnetic memory element, magnetic memory device, information recording/reproducing apparatus
- Patent Title (中): 磁存储元件,磁存储器件,信息记录/重放装置
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Application No.: US12839947Application Date: 2010-07-20
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Publication No.: US08164946B2Publication Date: 2012-04-24
- Inventor: Kei Hirata
- Applicant: Kei Hirata
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A magnetic memory element includes a pair of electrodes, a junction layer, at least one carbon nanotube, and at least one nanowire. The at least one nanowire is made of a ferromagnetic material and extends through a hole of each the at least one carbon nanotube with both ends being electrically connected to the pair of electrodes, respectively. The junction layer is made of a non-magnetic material and disposed between one of the pair of electrodes and one end of each the at least one nanowire. The one of the pair of electrodes is made of a ferromagnetic material. Magnetization of the at least one nanowire is reversed by spin injection performed through the junction layer with the one of the pair of electrodes. When a DC bias current and a detection current having a frequency coinciding with a magnetic resonance frequency of the nanowire are applied in a superimposed manner, between the electrodes, within a range not reaching a critical current density of the magnetization reversal, the pair of electrodes have a voltage corresponding to a magnetization direction of the nanowire.
Public/Granted literature
- US20120020147A1 MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, INFORMATION RECORDING/REPRODUCING APPARATUS Public/Granted day:2012-01-26
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