Invention Grant
US08166231B2 Memory controller, nonvolatile memory device, access device, and nonvolatile memory system
有权
存储控制器,非易失性存储器件,存取器件和非易失性存储器系统
- Patent Title: Memory controller, nonvolatile memory device, access device, and nonvolatile memory system
- Patent Title (中): 存储控制器,非易失性存储器件,存取器件和非易失性存储器系统
-
Application No.: US12376648Application Date: 2007-08-07
-
Publication No.: US08166231B2Publication Date: 2012-04-24
- Inventor: Tadashi Ono , Tatsuya Adachi , Masahiro Nakanishi , Takuji Maeda
- Applicant: Tadashi Ono , Tatsuya Adachi , Masahiro Nakanishi , Takuji Maeda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2006-215940 20060808
- International Application: PCT/JP2007/065424 WO 20070807
- International Announcement: WO2008/018446 WO 20080214
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02

Abstract:
The access device 100 designates a file ID without relating different address spaces of an access device 100 and a nonvolatile memory device 200 with each other and manages a data storing state only in a physical address space in the nonvolatile memory device 200. The access device 100 sends a transfer rate to the nonvolatile memory device 200 by using a transfer rate sending part 121. A filling rate calculation part 251 calculates a filling rate of physical block corresponding to a guaranteed speed required by the access device 100. A remaining capacity corresponding to the transfer rate is obtained by using the calculated filling rate and is sent to a remaining capacity receiving part 122 of the access device 100.
Public/Granted literature
- US20100115185A1 MEMORY CONTROLLER, NONVOLATILE MEMORY DEVICE, ACCESS DEVICE, AND NONVOLATILE MEMORY SYSTEM Public/Granted day:2010-05-06
Information query