Invention Grant
- Patent Title: Method of thinning wafer and support plate
- Patent Title (中): 减薄晶圆和支撑板的方法
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Application No.: US12309285Application Date: 2007-05-24
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Publication No.: US08167687B2Publication Date: 2012-05-01
- Inventor: Akihiko Nakamura , Atsushi Miyanari , Yoshihiro Inao , Yasumasa Iwata
- Applicant: Akihiko Nakamura , Atsushi Miyanari , Yoshihiro Inao , Yasumasa Iwata
- Applicant Address: JP
- Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee Address: JP
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Priority: JP2006-194692 20060714
- International Application: PCT/JP2007/000557 WO 20070524
- International Announcement: WO2008/007455 WO 20080117
- Main IPC: B24B1/00
- IPC: B24B1/00 ; B24B41/06

Abstract:
A wafer can be thinned without occurrences of dimples. A support plate 1 has a number of through holes 10. A circuit forming surface of a wafer 2 is adhered to one surface of the support plate by an adhesive member 4, and a dimple prevention member 3 having a thickness of 100 μm or more and having an adhesive layer 30 on one face is adhered to the other surface, thus the openings at both ends of the through holes 10 are blocked. The support plate is vacuum adsorbed to a support table through the dimple prevention member, and a non circuit-forming face of the wafer is ground/polished to thin the wafer. The dimple prevention member is stripped off, and a solvent is penetrated into the adhesive member through the through holes to detach the wafer from the support plate.
Public/Granted literature
- US20090325467A1 Method of Thinning Wafer and Support plate Public/Granted day:2009-12-31
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