Invention Grant
- Patent Title: III-nitride semiconductor device fabrication
- Patent Title (中): III族氮化物半导体器件制造
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Application No.: US11452547Application Date: 2006-06-14
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Publication No.: US08168000B2Publication Date: 2012-05-01
- Inventor: Mike Briere , Robert Beach
- Applicant: Mike Briere , Robert Beach
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: C30B25/04
- IPC: C30B25/04
Abstract:
A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to reduce stresses and prevent cracking.
Public/Granted literature
- US20070000433A1 III-nitride semiconductor device fabrication Public/Granted day:2007-01-04
Information query
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