Schottky diode and method therefor

Invention Grant

US08168466B2 Schottky diode and method therefor 有权

Title translation: 肖特基二极管及其方法

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Patent Title: Schottky diode and method therefor
Patent Title (中): 肖特基二极管及其方法
Application No.: US11757222

Application Date: 2007-06-01
Publication No.: US08168466B2

Publication Date: 2012-05-01
Inventor: Mohammed Tanvir Quddus , Shanghui L. Tu , Antonin Rozsypal , Zia Hossain
Applicant: Mohammed Tanvir Quddus , Shanghui L. Tu , Antonin Rozsypal , Zia Hossain
Applicant Address: US AZ Phoenix
Assignee: Semiconductor Components Industries, LLC
Current Assignee: Semiconductor Components Industries, LLC
Current Assignee Address: US AZ Phoenix
Agent Robert F. Hightower
Main IPC: H01L21/00
IPC: H01L21/00

Abstract:

In one embodiment, a Schottky diode is formed on a semiconductor substrate with other semiconductor devices and is also formed with a high breakdown voltage and a low forward resistance.

Abstract(Chinese):

在一个实施例中，在具有其它半导体器件的半导体衬底上形成肖特基二极管，并且还形成有高击穿电压和低正向电阻。

Public/Granted literature

US20080299751A1 SCHOTTKY DIODE AND METHOD THEREFOR Public/Granted day:2008-12-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备