Invention Grant
- Patent Title: Resistance variable memory device and method of fabricating the same
- Patent Title (中): 电阻可变存储器件及其制造方法
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Application No.: US12717219Application Date: 2010-03-04
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Publication No.: US08168479B2Publication Date: 2012-05-01
- Inventor: Daewon Ha
- Applicant: Daewon Ha
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR Suwon-Si
- Agency: Stanzione & Kim, LLP
- Priority: KR2009-18488 20090304
- Main IPC: H01L21/82
- IPC: H01L21/82

Abstract:
A method of fabricating a resistance variable device includes forming selection devices on a substrate, forming a conductive layer on the selection devices, patterning the conductive layer in a first direction to form conductive patterns spaced apart from each other in the first direction and connecting a pair of adjacent selection devices to each other in the first direction, forming a resistance-variable-material-layer on the conductive patterns, and patterning the resistance-variable-material-layer and the conductive patterns in a second direction to form rows of resistance-variable material extending in the second direction and to form electrodes spaced apart from one another, such that each electrode corresponds to a separate selection device.
Public/Granted literature
- US20100227438A1 RESISTANCE VARIABLE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-09-09
Information query
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