Invention Grant
- Patent Title: Method of manufacturing SOI substrate
- Patent Title (中): 制造SOI衬底的方法
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Application No.: US12762675Application Date: 2010-04-19
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Publication No.: US08168481B2Publication Date: 2012-05-01
- Inventor: Kazuya Hanaoka , Hideki Tsuya , Masaharu Nagai
- Applicant: Kazuya Hanaoka , Hideki Tsuya , Masaharu Nagai
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-104203 20090422
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/20 ; H01L21/30 ; H01L21/46
Abstract:
The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step.
Public/Granted literature
- US20100273310A1 METHOD OF MANUFACTURING SOI SUBSTRATE Public/Granted day:2010-10-28
Information query
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