Invention Grant
- Patent Title: Manufacturing method for light emitting device
- Patent Title (中): 发光装置的制造方法
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Application No.: US13108128Application Date: 2011-05-16
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Publication No.: US08168483B2Publication Date: 2012-05-01
- Inventor: Shunpei Yamazaki , Hideaki Kuwabara , Masakazu Murakami
- Applicant: Shunpei Yamazaki , Hideaki Kuwabara , Masakazu Murakami
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2002-276216 20020920
- Main IPC: H01L21/84
- IPC: H01L21/84
Abstract:
The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed.
Public/Granted literature
- US20110217802A1 Fabrication System and Manufacturing Method of Light Emitting Device Public/Granted day:2011-09-08
Information query
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