中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US08168484B2 Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof 失效
显示装置及其制造方法以及半导体装置及其制造方法

  • Patent Title: Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
  • Patent Title (中): 显示装置及其制造方法以及半导体装置及其制造方法
  • Application No.: US13276907
    Application Date: 2011-10-19
  • Publication No.: US08168484B2
    Publication Date: 2012-05-01
  • Inventor: Iwao Yagi
  • Applicant: Iwao Yagi
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: SNR Denton US LLP
  • Priority: JP2008-157489 20080617
  • Main IPC: H01L21/84
  • IPC: H01L21/84 ;  H01L21/00 ;  H01L21/4763
Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
Abstract:
A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode.
Abstract(Chinese):

一种在基板上形成包括源极/漏极的显示装置的方法，像素电极，绝缘分隔壁层，沟道区半导体层。 源极/漏极和像素电极形成在基板上并且彼此接触。 绝缘分隔壁层形成在基板上，并且设置有延伸到源电极和漏电极之间的第一开口和形成在像素电极上并延伸到像素电极的第二开口。 沟道区半导体层形成在第一开口的底部。 绝缘膜形成在隔壁层上以覆盖包括沟道区半导体层的第一开口。 取向膜从绝缘膜上方覆盖第一开口，从像素电极覆盖第二开口。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84 .....衬底不是半导体的，例如绝缘体
Patent Agency Ranking
0/0