Invention Grant
- Patent Title: Semiconductor device making method
- Patent Title (中): 半导体器件制造方法
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Application No.: US12461205Application Date: 2009-08-04
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Publication No.: US08168485B2Publication Date: 2012-05-01
- Inventor: Takeshi Endo , Eiichi Okuno , Takeo Yamamoto , Hirokazu Fujiwara , Masaki Konishi , Yukihiko Watanabe , Takashi Katsuno
- Applicant: Takeshi Endo , Eiichi Okuno , Takeo Yamamoto , Hirokazu Fujiwara , Masaki Konishi , Yukihiko Watanabe , Takashi Katsuno
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2008-201495 20080805; JP2008-317497 20081212
- Main IPC: H01L29/812
- IPC: H01L29/812 ; H01L21/338
Abstract:
A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.
Public/Granted literature
- US20100032730A1 Semiconductor device and method of making the same Public/Granted day:2010-02-11
Information query
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