Carbon nanotube high frequency transistor technology

Invention Grant

US08168495B1 Carbon nanotube high frequency transistor technology 失效

Title translation: 碳纳米管高频晶体管技术

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Patent Title: Carbon nanotube high frequency transistor technology
Patent Title (中): 碳纳米管高频晶体管技术
Application No.: US11966693

Application Date: 2007-12-28
Publication No.: US08168495B1

Publication Date: 2012-05-01
Inventor: Brian Y. Lim , Jon W. Lai
Applicant: Brian Y. Lim , Jon W. Lai
Applicant Address: US CA Pasadena
Assignee: Etamota Corporation
Current Assignee: Etamota Corporation
Current Assignee Address: US CA Pasadena
Agency: Aka Chan LLP
Main IPC: H01L29/72
IPC: H01L29/72

Carbon nanotube high frequency transistor technology

Abstract:

A technique of the invention reduces significantly the distance between the gate and single-walled carbon nanotubes to improve performance and efficiency of a carbon nanotube transistor device. Without using a porous template structure, single-walled carbon nanotubes are grown perpendicularly to a substrate between a base metal layer and a middle mesh layer. The nanotubes are insulated with a thin insulator and then gate regions are formed.

Abstract(Chinese):

本发明的技术显着降低了栅极和单壁碳纳米管之间的距离，以提高碳纳米管晶体管器件的性能和效率。在不使用多孔模板结构的情况下，单壁碳纳米管与基底金属层和中间网格层之间的基板垂直生长。纳米管与绝缘体绝缘，然后形成栅极区。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的