Invention Grant
- Patent Title: Tantalum silicon oxynitride high-K dielectrics and metal gates
- Patent Title (中): 钽硅氮氧化物高K电介质和金属栅极
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Application No.: US12855556Application Date: 2010-08-12
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Publication No.: US08168502B2Publication Date: 2012-05-01
- Inventor: Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
- Applicant: Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Electronic apparatus and methods of forming the electronic apparatus include a tantalum silicon oxynitride film on a substrate for use in a variety of electronic systems. The tantalum silicon oxynitride film may be structured as one or more monolayers. The tantalum silicon oxynitride film may be formed using a monolayer or partial monolayer sequencing process. Metal electrodes may be disposed on a dielectric containing a tantalum silicon oxynitride film.
Public/Granted literature
- US20100301428A1 TANTALUM SILICON OXYNITRIDE HIGH-K DIELECTRICS AND METAL GATES Public/Granted day:2010-12-02
Information query
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