Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12755467Application Date: 2010-04-07
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Publication No.: US08168512B2Publication Date: 2012-05-01
- Inventor: Takuya Tsurume
- Applicant: Takuya Tsurume
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-321525 20051104
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
To provide a thin semiconductor device having flexibility. A groove is formed in one surface of a substrate; an element layer including an element is formed, the element being disposed within the groove; the substrate is thinned from the other surface of the substrate until one surface of the element layer is exposed, to form a layer which is to be transposed, having the element; and the layer to be transposed is transposed onto the film.
Public/Granted literature
- US20100197113A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2010-08-05
Information query
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