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US08168512B2 Manufacturing method of semiconductor device 有权
半导体器件的制造方法

Manufacturing method of semiconductor device
Abstract:
To provide a thin semiconductor device having flexibility. A groove is formed in one surface of a substrate; an element layer including an element is formed, the element being disposed within the groove; the substrate is thinned from the other surface of the substrate until one surface of the element layer is exposed, to form a layer which is to be transposed, having the element; and the layer to be transposed is transposed onto the film.
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